Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope
نویسندگان
چکیده
منابع مشابه
NAND Flash Design Trends
die and beyond with MLC (two bit per cell) technology with 50nm and 40nm process nodes. Despite this impressive growth of bit density, program performance of NAND Flash has remained in 10MB/s range. As consumer’s need for more digital contents grows, companies are paying more attention to improve program and read performance of NAND Flash devices to meet the consumer’s appetite for more bits an...
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With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory. With the aggressive memory scaling, however, the reliability decays sharply owing to multiple interferences. Therefor...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2016
ISSN: 2168-6734
DOI: 10.1109/jeds.2016.2593792